Flexible Memristor Constructed by 2D Cadmium Phosphorus Trichalcogenide for Artificial Synapse and Logic Operation
Zehui Peng, Ziqiang Cheng, Shanwu Ke, Yongyue Xiao, Zhaoer Ye, Zikun Wang, Tongyu Shi, Cong Ye, Xin Wen, Paul K. Chu, Xue‐Feng Yu, Jiahong Wang
Abstract
Abstract The development of advanced microelectronics requires new device architecture and multi‐functionality. Low‐dimensional material is considered as a powerful candidate to construct new devices. In this work, a flexible memristor is fabricated utilizing 2D cadmium phosphorus trichalcogenide nanosheets as the functional layer. The memristor exhibits excellent resistive switching performance under different radius and over 10 3 bending times. The device mechanism is systematically investigated, and the synaptic plasticity including paired‐pulse facilitation and spiking timing‐dependent plasticity are further observed. Furthermore, based on the linearly conductance modulation capacity of the flexible memristor, the applications on decimal operation are explored, that the addition, subtraction, multiplication, and division of decimal calculation are successfully achieved. These results demonstrate the potential of metal phosphorus trichalcogenide in novel flexible neuromorphic devices, which accelerate the application process of neuromorphic computing.