Ammonolysis Under NH ₃ –Limiting Conditions as a Pathway to Improved LaTiO ₂ N Water Splitting Photoanodes

Abstract

LaTiO 2 N is a promising intermediate band gap semiconductor for the water splitting reaction, a pathway to hydrogen fuel from solar energy. However, the photoelectrochemical (PEC) activity of the material is hindered by defects, particularly Ti(III) species, which promote photocarrier recombination. These defects are formed during the high-temperature ammonolysis reaction. Here we show that improved LaTiO 2 N materials can be synthesized under NH 3 -limiting conditions by introducing N 2 to lower the NH 3 partial pressure to 0.13 atm. This reduces the Ti(III) defect density in the material from 6.06 × 10 16 to ∼4.61 × 10 15 cm –3, by a factor of 13, based on electron paramagnetic resonance (EPR) spectroscopy. Any remaining Ti(III) defects are localized at the LaTiO 2 N surface, according to X-ray photoelectron spectroscopy (XPS), due to the formation of a depletion layer in the semico. Optical absorption spectra of the improved LaTiO 2 N reveal a blue-shifted band gap absorption edge and a suppressed sub-band gap absorption. Defect removal also reduces a sub-band gap surface photovoltage feature visible in the 1.0 atm reference material. The improved LaTiO 2 N supports a 1.57 mA cm –2 water oxidation photocurrent at 1.23 V RHE under simulated sunlight conditions, and an enhanced quantum efficiency of 4.5% (400 nm) for photocatalytic oxygen evolution from aqueous silver nitrate solution. Stable PEC operation is observed for over 55 min. This confirms that ammonolysis under NH 3 -limiting conditions improves the solar energy conversion properties of LaTiO 2 N. The ability to control metal ion defects in oxynitrides by varying the ammonia partial pressure during ammonolysis might be generally useful for the preparation of metal nitrides and oxynitrides.

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