Novel patterned sapphire substrates for enhancing the efficiency of GaN-based light-emitting diodes
Szu-Han Chao, Li‐Hsien Yeh, Rudder T. Wu, Kyoko Kawagishi, Shih‐Chieh Hsu
Abstract
A novel patterned sapphire substrate composed of a silicon nitride barrier and air voids was developed for enhancing the efficiency of GaN-based light-emitting diodes.
Topics & Concepts
Materials scienceOptoelectronicsLight-emitting diodeQuantum efficiencyLuminous efficacySapphireDiodeCladding (metalworking)EpitaxyRefractive indexVoid (composites)NitrideLayer (electronics)OpticsLaserComposite materialPhysicsGaN-based semiconductor devices and materialsZnO doping and propertiesOptical Coatings and Gratings