A novelty design for radiation resistance of SiC by recrystallization-induced stacking faults
Deyuan Li, Hui Li, Bingsheng Li
Abstract
Stacking faults are important for improving radiation resistance of SiC. We reported a new method to fabricate stacking faults by recrystallization of amorphous SiC, which was formed by Si implantation at room temperature. The density and length of stacking faults were investigated by transmission electron microscopy. Defect recombination depended on the direction of stacking faults. Less defects remained in ion-irradiated materials when the habit plane of stacking faults is perpendicular to the irradiation surface.
Topics & Concepts
StackingMaterials scienceRecrystallization (geology)Transmission electron microscopyAmorphous solidIrradiationStacking faultComposite materialRadiation resistanceCrystallographyOptoelectronicsNanotechnologyDislocationNuclear magnetic resonancePhysicsPaleontologyNuclear physicsBiologyChemistryAdvanced ceramic materials synthesisSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devices