Influence of swift heavy ion irradiation on electrical characteristics of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diode
Mingzhuo Hua, Zhourui Xu, Xusheng Tian, Zhengxing Wang, Chunfu Zhang, Shenglei Zhao, Yachao Zhang, Jing Ning, Qian Feng, Jincheng Zhang, Hao Yue
Abstract
Abstract The radiation effect of swift heavy ions (16 MeV 181 Ta) on the Au/Ni/ β -Ga 2 O 3 vertical Schottky barrier diodes (SBDs) were investigated at the fluence of 1 × 10 8 , 3 × 10 8 and 3 × 10 9 cm −2 . The SBDs were characterized by current density–voltage ( J–V) and capacitance–voltage ( C–V ) measurements. It was found that Schottky barrier height φ decreased from 1.11 eV to 0.94 eV, the ideality factor n increased from 1.01 to 1.29, turn-on voltage V on increased from 0.52 V to 0.80 V after radiation of 3 × 10 9 cm −2 . The reverse breakdown voltage was decreased from −405 V to −375 V, −350 V and −255 V after radiation of 1 × 10 8 , 3 × 10 8 and 3 × 10 9 cm −2 , respectively. In addition, the carrier concentration calculated from the capacitance–voltage curves was decreased significantly. Based on the G/ω–ω measurement results, the trap density at the Ni/ β -Ga 2 O 3 interface was extracted to be 2.89 × 10 15 –2.49 × 10 16 cm −2 eV −1 and 2.18 × 10 15 –4.98 × 10 16 cm −2 eV −1 with the energy level of 0.85–0.87 eV below the conduction band edge.