Reducing intersystem crossing rates of boron emitters for high-efficiency and long-lifetime deep-blue OLEDs
Keyan Bai, Mengke Li, Xiaofeng Tan, Lei Dai, Kaichun Liang, Huiyang Li, Shi‐Jian Su
Abstract
An external quantum efficiency of 6.7% and a long operational lifetime of 136 h at 1000 cd m −2 were simultaneously realized for organic light-emitting diodes based on the deep-blue boron emitter (B-N-S-3), owing to the reduced intersystem crossing rate of the emitter.
Topics & Concepts
Intersystem crossingCommon emitterMaterials scienceOLEDBoronQuantum efficiencyOptoelectronicsDiodeNanotechnologyAtomic physicsPhysicsLayer (electronics)Nuclear physicsSinglet stateExcited stateOrganic Light-Emitting Diodes ResearchOrganic Electronics and PhotovoltaicsLuminescence and Fluorescent Materials