Electron inducing soft errors in 28 nm system-on-Chip
Weitao Yang, Yonghong Li, Weidong Zhang, Yaxin Guo, Haoyu Zhao, Jianan Wei, Yang Li, Chaohui He, Kesheng Chen, Gang Guo, Boyang Du, Sterpone Luca
Abstract
ABSTRACT The 28 nm system-on-chip (SoC) was irradiated by 12 MeV electron at the China Institute of Atomic Energy (CIAE) for the first time. Soft errors in the on-chip memory (OCM), D-Cache, Register and BRAM blocks were investigated. The obtained device cross sections are almost in the range of 10−13 cm2 to 10−11 cm2 for the blocks. The results demonstrate that electron fluence per pulse and the corresponding prompt dose rates have no influence on the soft errors in 28 nm SoC. The discrepancy was analyzed between proton and electron inducing soft errors in D-Cache and BRAM blocks, too. The secondary electron is considered as the dominant reason for soft errors caused by 12 MeV electron in 28 nm SoC.