Two-dimensional layered Dion–Jacobson phase organic–inorganic tin iodide perovskite field-effect transistors
Hongyu Ji, Xin Liu, Longtao Li, Fan Zhang, Liang Qin, Zhidong Lou, Dan Li, Yufeng Hu, Yanbing Hou, Feng Teng
Abstract
The single BDA 2+ layer in D–J BDASnI 4 eliminates the van der Waals gap in R–P perovskites, enhancing the out-of-plane charge transport and structural stability. Polymer-gated BDASnI 4 FETs show improved performance and environmental stability.
Topics & Concepts
Perovskite (structure)van der Waals forceMaterials scienceHalideIodideTinPhase (matter)Organic field-effect transistorChemical engineeringField-effect transistorInorganic chemistryTransistorCrystallographyChemistryMoleculeOrganic chemistryElectrical engineeringEngineeringMetallurgyVoltagePerovskite Materials and ApplicationsElectronic and Structural Properties of OxidesZnO doping and properties