Layer-Dependent Giant Magnetoresistance in Two-Dimensional <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mrow><mml:mi>Cr</mml:mi><mml:mi>PS</mml:mi></mml:mrow><mml:mn>4</mml:mn></mml:msub></mml:math> Magnetic Tunnel Junctions
Jie Yang, Shibo Fang, Yuxuan Peng, Shiqi Liu, Baochun Wu, Ruge Quhe, Shilei Ding, Chen Yang, Jiachen Ma, Bowen Shi, Linqiang Xu, Xiaotian Sun, Guang Tian, Changsheng Wang, Junjie Shi, Jing Lü, Jinbo Yang
Abstract
Antiferromagnetism within the two-dimensional (2D) family offers a platform for spintronics. The emergent 2D semiconductor ${\mathrm{Cr}\mathrm{PS}}_{4}$ is proved to be composed of ferromagnetic layers with antiferromagnetic coupling along the stacking direction in the experiment. By using the first-principles quantum-transport simulation, we evaluate the spin-resolved transport in the magnetic tunnel junction built by the 2D ${\mathrm{Cr}\mathrm{PS}}_{4}$ tunnel barrier with large thickness ranges. We find the magnetoresistance generally increases with the number of tunnel layers from 140% (three layers) to a surprising 370 000% (10 layers). An odd-even oscillation magnetoresistance behavior exists in few layers due to the electrode option. Our results will inspire further experimental verification and provide vital insights for 2D spintronics design.