Femtometer atomic displacement, the root cause for multiferroic behavior of CuO unearthed through polarized Raman spectroscopy
Binoy Krishna De, Vivek Dwij, Ryusuke Misawa, T. Kimura, Vasant Sathe
Abstract
Abstract Recently, CuO has been proposed as a potential multiferroic material with high transition temperature. Competing models based on spin current and ionic displacements are invoked to explain ferroelectricity in CuO. The theoretical model based on ionic displacement predicted very small displacement (∼10 −5 Å) along the b axis. Experimentally detecting displacements of such a small amplitude in a particular direction is extremely challenging. Through our detailed angle resolved polarized Raman spectroscopy study on single crystal of CuO, we have validated the theoretical study and provided direct evidence of displacement along the b axis. Our study provides important contribution in the high temperature multiferroic compounds and showed for the first time, the use of the polarized Raman scattering in detecting ionic displacements at the femtometer scale.