Size Dependence of Charge-Density-Wave Orders in Single-Layer NbSe<sub>2</sub> Hetero/Homophase Junctions
Zeping Huang, Xuan Song, Yaoyao Chen, Han Yang, Peiwen Yuan, Hang Ma, Jingsi Qiao, Yu Zhang, Jia‐Tao Sun, Teng Zhang, Yuan Huang, Liwei Liu, Hong‐Jun Gao, Yeliang Wang
Abstract
Controlling charge-density-wave (CDW) orders in two-dimensional (2D) crystals has attracted a great deal of interest because of their fundamental physics and their demand inse in miniaturized devices. In this work, we systematically studied the size-dependent CDW orders in single-layer hetero/homo-NbSe2 stacking junctions. We found that the CDW orders in the top 1T-NbSe2 layer of the junctions are highly dependent on its lateral size. For the 1T/2H-NbSe2 heterojunction, the critical lateral size of 1T-NbSe2 islands for the formation of well-defined CDW orders is ∼26 nm, whereas below 15 nm, the CDW orders melt. However, for the 1T/1T-NbSe2 homojunction, the CDW orders in the islands can persist even with a lateral size of <11 nm. Our findings illuminate the fresh phenomenon of size-dependent CDW orders existing in 2D van der Waals hetero/homojunctions and provide useful information for the control of CDW orders.