Novel Si-SiC hybrid switch and its design optimization path
Felix Kayser, F. Pfirsch, F.‐J. Niedernostheide, Roman Baburske, Hans-Günter Eckel
Abstract
Since the turn-off switching speed for SiC MOSFETs for medium and high-power applications is limited by the overvoltage induced by negative di/dt and parasitic inductance, a combination of a SiC MOSFET with a Si IGBT in parallel is an attractive solution that benefits from both technologies. The basic idea of the Si-SiC hybrid switch investigated in this paper is to substitute the Si diode area of a conventional full-Si power module with SiC MOSFETs using no additional diode. This work investigates in experiments which Si IGBT design is most suitable for a given IGBT-MOSFET area ratio. Up to 80% of the performance gain of a full-SiC solution can be achieved by the novel hybrid switch concept.