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Dysprosium oxide (Dy2O3) layer effect on the interface possessions of Au/n-GaN Schottky diode as an interlayer and its chemical and microstructural features

D. Surya Reddy, V. Rajagopal Reddy, Chel‐Jong Choi

2024Materials Science in Semiconductor Processing15 citationsDOI

Topics & Concepts

DysprosiumMaterials scienceSchottky diodeSchottky barrierOxideDiodeX-ray photoelectron spectroscopyLayer (electronics)SemiconductorOptoelectronicsNanotechnologyMetallurgyInorganic chemistryNuclear magnetic resonanceChemistryPhysicsSemiconductor materials and interfacesSemiconductor materials and devicesGaN-based semiconductor devices and materials
Dysprosium oxide (Dy2O3) layer effect on the interface possessions of Au/n-GaN Schottky diode as an interlayer and its chemical and microstructural features | Litcius