Interface and polarization effects induced Schottky-barrier-free contacts in two-dimensional MXene/GaN heterojunctions
Jun Wang, Xiangyu Zhou, Mingjun Yang, Dan Cao, Xiaoshuang Chen, Haibo Shu
Abstract
Interface and polarization effects induce the transition from Schottky to Ohmic contacts in two-dimensional MXene/GaN heterojunctions.
Topics & Concepts
Materials scienceHeterojunctionSchottky barrierOhmic contactOptoelectronicsSchottky diodePolarization (electrochemistry)Metal–semiconductor junctionInterface (matter)NanotechnologyLayer (electronics)Composite materialChemistryDiodeCapillary actionCapillary numberPhysical chemistryMXene and MAX Phase Materials2D Materials and ApplicationsGraphene research and applications