Vertical β-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes with trench staircase field plate
Sandeep Kumar, Hisashi Murakami, Yoshinao Kumagai, Masataka Higashiwaki
Abstract
Abstract This study presents vertical Ga 2 O 3 Schottky barrier diodes (SBDs) with a staircase field plate on a deep trench filled with SiO 2 . It was clarified from device simulation that at high reverse voltage operation, the staircase field plate and the deep trench can effectively alleviate electric field concentration in the Ga 2 O 3 drift layer and the SiO 2 layer, respectively. The Ga 2 O 3 SBDs successfully demonstrated superior device characteristics typified by an on-resistance of 7.6 mΩ cm 2 and an off-state breakdown voltage of 1.66 kV. These results offer the availability of the trench staircase field plate as an edge termination structure for the development of Ga 2 O 3 SBDs.