Scalable memory elements based on rectangular SIsFS junctions
L. N. Karelina, Razmik A. Hovhannisyan, I. A. Golovchanskiy, В. И. Чичков, A. Ben Hamida, V. S. Stolyarov, L. S. Uspenskaya, Sh. A. Erkenov, V. V. Bol’ginov, V. V. Ryazanov
Abstract
We explore the concept of the Josephson magnetic memory element based on a multilayer two-barrier SIsFS Josephson junction storing the digital state by means of the orientation of magnetization in the F-layer. A diluted PdFe alloy with 1% magnetic atoms is used as a ferromagnet (F), and a tunnel AlOx layer (I) ensures a high voltage in the resistive state. We have studied two junctions of a rectangular shape in which two digital states are defined by the orientation of the residual F-layer magnetization set along or across the junction in the plane of the ferromagnetic barrier. Implementations of both binary and ternary logic elements are demonstrated. A scalability of rectangular memory elements is analyzed using micro-magnetic modeling.