Artificial synaptic device and neural network based on the FeGa/PMN-PT/FeGa memtranstor
Jianxin Shen, Hang Li, Wenhong Wang, Shouguo Wang, Young Sun
Abstract
The memtranstors employing the magnetoelectric effects have the great potential to develop artificial synaptic devices. We have fabricated a memtranstor made of the FeGa/PMN-PT/FeGa multiferroic heterostructure and used it to mimic the functions of synapses. The magnetoelectric voltage of the device can be continuously tuned by applying a train of electric-field pulses. Consequently, synaptic plasticity, including the long-term potentiation, long-term depression, and spiking-time-dependent plasticity, has been demonstrated in the memtranstor at room temperature. Simulations on a neural network made of an array of the memtranstors reveal the capability of pattern learning with a high accuracy.