GaN based High Power SPDT Switch for Single Chip X-Band T/R Module Front-End

Muhammad Assad, Ali Imran Najam, Hammad M. Cheema

202112 citationsDOI

Abstract

This paper presents the design of a GaN based Single Pole Double Throw (SPDT) switch for next generation single chip front-ends of phased array Transmit/Receive (T/R) modules. The switch is designed using Wolfspeed 0.15µm GaN/SiC technology and exhibits excellent insertion loss (IL) performance with 1.1 dB in transmit and ˂1.3 dB in receive mode over the entire X-Band. On-state performance shows return loss less than -10 dB with off-state isolation higher than 25 dB and 20 dB for transmit and receive on-states respectively. The presented switch has P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1dB</inf> of 41.8 dBm with overall chip size of 2.76mm x 1.36mm.

Topics & Concepts

Insertion lossReturn lossFront and back endsChipPhysicsElectrical engineeringPower (physics)OptoelectronicsMaterials scienceTopology (electrical circuits)Computer scienceEngineeringAntenna (radio)Quantum mechanicsOperating systemGaN-based semiconductor devices and materialsRadio Frequency Integrated Circuit DesignMicrowave Engineering and Waveguides