Multi-level flash memory device based on stacked anisotropic ReS<sub>2</sub>–boron nitride–graphene heterostructures
Enxiu Wu, Yuan Xie, Shijie Wang, Daihua Zhang, Xiaodong Hu, Jing Liu
Abstract
memory device is potentially able to serve the entire memory device hierarchy, meeting the need for scalability, capacity, speed, retention, and endurance at each level.
Topics & Concepts
Boron nitrideHeterojunctionGrapheneMaterials scienceOptoelectronicsFlash (photography)BoronNanotechnologyFlash memoryComputer scienceOpticsChemistryEmbedded systemPhysicsOrganic chemistry2D Materials and ApplicationsGraphene research and applicationsAdvanced Memory and Neural Computing