P-type Doping in Large-Area Monolayer MoS<sub>2</sub> by Chemical Vapor Deposition
Mengge Li, Jiadong Yao, Xiaoxiang Wu, Shucheng Zhang, Boran Xing, Xinyue Niu, Xiaoyuan Yan, Ying Yu, Yali Liu, Yewu Wang
Abstract
Molybdenum disulfide (MoS2) with excellent properties has been widely reported in recent years. However, it is a great challenge to achieve p-type conductivity in MoS2 because of its native stubborn n-type conductivity. Substitutional transition metal doping has been proved to be an effective approach to tune their intrinsic properties and enhance device performance. Herein, we report the growth of Nb-doping large-area monolayer MoS2 by a one-step salt-assisted chemical vapor deposition method. Electrical measurements indicate that Nb doping suppresses n-type conductivity in MoS2 and shows an ambipolar transport behavior after annealing under the sulfur atmosphere, which highlights the p-type doping effect via Nb, corresponding to the density functional theory calculations with Fermi-level shifting to valence band maximum. This work provides a promising approach of two-dimensional materials in electronic and optoelectronic applications.