2D layered halide perovskite for field-effect transistors
Tufan Paul, Silvia Colella, Emanuele Orgiu
Abstract
Field-effect transistors are crucial components for modern electronics, generating significant research and profitable interest. Metal halide perovskites have recently emerged as a pioneering active material in solar cells, generating interest in their potential use in other electronic and (opto)electronic devices, including field-effect transistors and phototransistors. However, before they can be commercialized, they still face significant challenges owing to their immanent instabilities with respect to heat, moisture, and light. In contrast, due to their exceptional environmental stability, the newly emerging two-dimensional Ruddlesden–Popper type perovskites have garnered significant recognition. The current state of the field is covered in this review article, as are the problems, and a perspective for the scenarios of perovskite field-effect transistors. The effects of temperature, light, and measurement conditions are taken into account, as well as the physics of the device and the fundamental mechanisms that drive these devices, such as ion migration and ionic defects. Subsequently, the performance of perovskite transistors and phototransistors described so far is analyzed and critically evaluated. Finally, the major roadblocks to perovskite transistor advancement are identified and explored. The lessons learned from other perovskite optoelectronic devices are investigated in order to address these obstacles and bring these devices closer to industrial implementation.