Two‐Dimensional Memtransistors for Non‐Von Neumann Computing: Progress and Challenges
Akshay Wali, Saptarshi Das
Abstract
Abstract The increased demand of high‐performance computing systems has exposed the inherent limitations of the current state‐of‐the‐art von Neumann architecture. Therefore, developing alternate computing primitives that can offer faster computing speed with low energy expenditure is critical. In this context, while several non‐volatile memory (NVM) devices such as synaptic transistors, spintronic devices, phase change memory (PCM), and memristors have been demonstrated in the past, their two‐terminal nature necessitates additional peripheral elements that increase area and energy overhead. Recently, a new multiterminal device prototype known as a memtransistor has shown tremendous potential to overcome these limitations through exceptional control of the gate electrostatics as enabled by 2D channel materials. In this perspective, a brief overview of recent developments in 2D‐memtransistor devices is provided, including their fundamental operational mechanisms and the role of defects in enabling multiple NVM states and optical photoresponse. An overview of their implementation in the context of neuromorphic, probabilistic, information security, and edge‐sensing primitives is also provided. Finally, a futuristic perspective is provided looking toward their successful large‐scale technological integration.