A comparison of electrical characteristics of Au/n-Si (MS) structures with PVC and (PVC: Sm <sub>2</sub> O <sub>3</sub> ) polymer interlayer
Ş. Altındal, Ali Barkhordari, Süleyman Özçelik, Gholamreza Pirgholi‐Givi, Hamid Reza Mashayekhi, Yashar Azizian‐Kalandaragh
Abstract
Abstract The effects of polyvinylchloride (PVC) and samarium oxide-polyvinylchloride (PVC: Sm 2 O 3 ) polymer interlayers on the electrical characteristics in detail. The fabricated reference sample Au/n-Si, Au/PVC/n-Si, and Au/(PVC: Sm 2 O 3 )/n-Si were named as Metal-Semiconductor (MS), Metal-Polymer-Semiconductor (MPS1), and MPS2 structure, respectively. The procedure of providing Sm 2 O 3 is also described in detail. XRD, FE-SEM), EDX, and UV–vis spectroscopy, have been applied to study the mean crystalline structure, morphology, elemental characterization, and optical features of the provided Sm 2 O 3 . After structural analysis, the I-V features were performed in the wide range voltage (±3.5 V), and then, the basic electronic parameters of these structures were extracted from various techniques and compared with each other. Experimental results show that (PVC: Sm 2 O 3 ) leads to an increase of barrier-height (BH), rectifying-rate <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mfenced close=")" open="(" separators=""> <mml:mrow> <mml:mi>R</mml:mi> <mml:mi>R</mml:mi> <mml:mo>=</mml:mo> <mml:msub> <mml:mrow> <mml:mi>I</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>F</mml:mi> </mml:mrow> </mml:msub> <mml:mo>/</mml:mo> <mml:msub> <mml:mrow> <mml:mi>I</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>R</mml:mi> </mml:mrow> </mml:msub> </mml:mrow> </mml:mfenced> <mml:mo>,</mml:mo> </mml:math> shunt-resistance ( R sh ), and decrease of ideality-factor (n), surface-states ( N ss ). The RR of the MPS2 structure was found 117 times higher than the MS structure. The energy-dependent profile of N ss was also obtained from the forward bias I–V data by considering voltage-dependent n and BH. The plots reverse-bias <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mi>ln</mml:mi> <mml:mrow> <mml:mfenced close=")" open="(" separators=""> <mml:mrow> <mml:msub> <mml:mrow> <mml:mi>I</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>R</mml:mi> </mml:mrow> </mml:msub> </mml:mrow> </mml:mfenced> </mml:mrow> <mml:mo>−</mml:mo> <mml:msubsup> <mml:mrow> <mml:mi>V</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>R</mml:mi> </mml:mrow> <mml:mrow> <mml:mn>0.5</mml:mn> </mml:mrow> </mml:msubsup> </mml:math> characteristics show that Schottky-emission (SE) type conduction mechanism is effective for MS structure, whereas Poole-Frenkel-emission (PFE) is effective for MPS structures.