Numerical simulation of CdSe/ZnTe thin film solar cells by SCAPS-1D: Optimization of absorber layer thickness
himanshu ., Kamlesh Kamlesh, D. Suthar, M.S. Dhaka
Abstract
The numerical simulation is a crucial approach for optimization of different architectures of solar cells. Currently, there is an explicit demand of device design and numerical simulation associated to the thin film solar cells . In order to taper the scope and bridge this research gap, the optimization of absorber layer thickness is undertaken employing SCAPS-1D software. Herein, device designing and numerical simulation to the CdSe/ZnTe based hetero-junction solar cell bearing device architecture of glass/FTO/ZnTe/CdSe/Ag is undertaken. The thickness of CdSe absorber layer is varied from 1 μm to 5 μm with an interval of unity. The findings revealed that better performance comprising V oc of 698 mV, J sc of 3.0689 mA/cm 2 , FF of 82.76% and power conversion efficiency of 1.79% is predicted for absorber layer thickness of 5 μm. The quantum efficiency of more than 60% is observed in lower wavelength region for devices having higher absorber thickness. It could be believed that present concise study on CdSe/ZnTe hetero-junction solar cells would provide novel road map and withdraw the attention of researchers for development of facile devices.