Realization of highly conducting <i>n</i>-type diamond by phosphorus ion implantation
Dhruba Das, Asokan Kandasami, M. S. Ramachandra Rao
Abstract
We report on the formation of n-type ultra-nanocrystalline diamond exhibiting high electrical conductivity, σRT ∼104 Ω−1 m−1 by phosphorus ion implantation. The Raman study confirms the restoration of crystallinity upon high vacuum and high-temperature annealing post-implantation process at 850 °C. Varying the fluence enabled us to obtain a reduced thermal activation energy of Ea ∼8 meV with a very high carrier concentration of ne ∼1021 cm−3. Hall measurements confirm the n-type nature in phosphorus-implanted diamond at a high fluence of 1016 ions/cm2, and the nonlinear Hall effect reveals the signature of two band conduction mechanism, one via the impurity band and the other through the conduction band.