Effect of High-K Dielectric materials on Mobility of Electrons
D. Venkata Ratnam
Abstract
MOSFET is easier to manufacture than BJT and uses less processing power. To follow the law of the MOORE, in this paper we have adopt the principle of replacing SiO 2 dielectric with high-k materials, but it produces some effects. Here we define the problem of mobility. The mobility degradation is due to Coulombic and Phonon scattering. Improvement considerations for the degradation of mobility were also based. This paper offers information on the mobility using different dielectrics.
Topics & Concepts
ElectronDielectricHigh-κ dielectricMaterials scienceCondensed matter physicsEngineering physicsOptoelectronicsPhysicsNuclear physicsSemiconductor materials and devicesElectron and X-Ray Spectroscopy TechniquesCopper Interconnects and Reliability