To the Issue of the Memristor’s HRS and LRS States Degradation and Data Retention Time
А. В. Фадеев, K. V. Rudenko
Abstract
Abstract In this review of experimental studies, the retention time and endurance of memristor RRAM memory elements based on reversible resistive switching in oxide dielectrics are studied. The influence of external parameters—switching pulses and ambient temperature—as well as internal factors—evolution of the concentration of oxygen vacancies in the filament region, the material, structure; the thickness of the active dielectric layer, material of metal electrodes on the long-term stability of high resistance state (HRS) and the low resistance state (LRS) of the memristor is discussed.
Topics & Concepts
MemristorResistive random-access memoryMaterials scienceData retentionProtein filamentDegradation (telecommunications)ElectrodeDielectricDielectric strengthHigh resistanceOptoelectronicsNon-volatile memoryOxideResistive touchscreenLayer (electronics)Composite materialElectronic engineeringElectrical engineeringComputer scienceChemistryMetallurgyTelecommunicationsAgronomyEngineeringPhysical chemistryBiologyAdvanced Memory and Neural ComputingTransition Metal Oxide NanomaterialsFerroelectric and Negative Capacitance Devices