Effect of annealing temperature on oxygen vacancy and infrared radiation properties of the Co doped α-MoO3 materials
Xuejun Zhang, Sen Peng, Han Huang, Xiao Guo, A. Boukhachem, Lianwen Deng
Abstract
The infrared emissivity of Co doped α-MoO 3 was tested, and the resistivity was tested according to the relationship between infrared emissivity and electrical conductivity . In order to further explore the influencing factors of infrared emissivity, the oxygen vacancy concentration was tested according to the relationship between electrical conductivity and oxygen vacancy . It is found that annealing temperature has a significant effect on the infrared emissivity of Co doped α-MoO 3 . The infrared emissivity, resistivity and oxygen vacancy concentration first decrease and then increase with the increase of annealing temperature. The infrared emissivity is the minimum when the annealing temperature is 500 °C. The oxygen vacancy concentration is characterized and analyzed by XPS and Raman. The results show that the oxygen vacancy concentration can be changed by controlling the annealing temperature, thus the conductivity can be changed, and the infrared emission can be controlled.