Quantum well interband semiconductor lasers highly tolerant to dislocations
L. Cerutti, Daniel Andrés Díaz Thomas, Jean‐Baptiste Rodriguez, Marta Rio Calvo, G. Patriarche, А. Н. Баранов, E. Tournié
Abstract
III-V semiconductor lasers integrated on Si-based photonic platforms are eagerly awaited by the industry for mass-scale applications, from interconnect to on-chip sensing. The current understanding is that only quantum dot lasers can reasonably operate at the high dislocation densities generated by the III-V-on-Si heteroepitaxy, which induces high non-radiative carrier recombination rates. Here we propose a strategy based on a type-II band alignment to fabricate quantum well lasers highly tolerant to dislocations. A mid-IR GaInSb/InAs interband cascade laser grown on Si exhibits performances similar to those of its counterpart grown on the native GaSb substrate, in spite of a dislocation density in the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:msup> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mn>10</mml:mn> </mml:mrow> <mml:mn>8</mml:mn> </mml:msup> </mml:mrow> <mml:mspace width="thickmathspace"/> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:msup> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mi mathvariant="normal">c</mml:mi> <mml:mi mathvariant="normal">m</mml:mi> </mml:mrow> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mo>−</mml:mo> <mml:mn>2</mml:mn> </mml:mrow> </mml:msup> </mml:mrow> </mml:math> range. Over 3800 h of continuous-wave operation data have been collected, giving an extrapolated mean time to failure exceeding 312,000 h. This validates the proposed strategy and opens the way to new integrated laser development.