Voids-free Die-level Cu/ILD Hybrid bonding
Katsuyuki Sakuma, Roy Yu, Nicholas A. Polomoff, Luke Darling, Promod R. Chowdhury, Sathya Raghavan, Keodara Seifert, John Knickerbocker, Dale McHerron, Ming Li, Siu Cheung So, So Ying Kwok, Chun Ho Fan, Siu Wing Lau
Abstract
Multiple moisture evolutions/adsorptions pathways on the dielectric film surfaces and in the film bulk were linked to bonding voids contributions based on Zhuravlev model in silica. A die-to-die (DtD) and die-to-wafer (DtW) Cu/interlayer dielectric (ILD) hybrid bonding methodology has been successfully developed to reduce and eliminate moisture related voids with defect-free results.
Topics & Concepts
Die (integrated circuit)Materials scienceDielectricWaferComposite materialMoistureWafer bondingVoid (composites)OptoelectronicsNanotechnology3D IC and TSV technologiesElectronic Packaging and Soldering TechnologiesCopper Interconnects and Reliability