Infrared photoluminescence and dynamic properties of ZnGa<sub>2</sub>Se<sub>4</sub>
S. G. Asadullayeva, N. A. Ismayilova, T. G. Naghiyev
Abstract
The optical properties of the ZnGa 2 Se 4 are investigated by infrared (IR) reflectivity, Raman scattering, photoluminescence and DFT simulations. We have analyzed pairs of lines of FL corresponding to 1.24[Formula: see text]eV and 1.22[Formula: see text]eV at low energy excitations, about these FL maxima haven’t any information in other works. Studies show that depending on the temperature, the intensity of luminescence decreases and formed new third maximum. The energy difference between each of these peaks is 0.02[Formula: see text]eV, which corresponds to the energy of the most intense phonon in the Raman spectrum.
Topics & Concepts
PhotoluminescencePhononRaman spectroscopyRaman scatteringLuminescenceInfraredMaterials scienceEnergy (signal processing)Intensity (physics)PhysicsAtomic physicsMolecular physicsCondensed matter physicsOpticsOptoelectronicsQuantum mechanicsChalcogenide Semiconductor Thin FilmsQuantum Dots Synthesis And PropertiesCrystal Structures and Properties