Morphological and microstructural analysis of triangular defects in 4H-SiC homoepitaxial layers
Jinying Yu, Yi Yu, Zhiqiang Bai, Yan Peng, Xiao-Yan Tang, Xiaobo Hu, Xuejian Xie, Xiangang Xu, Xiufang Chen
Abstract
Surface morphologies of triangular defects with TD-I, TD-II and TD-III observed by optical microscopy.
Topics & Concepts
Materials scienceHexagonal crystal systemCrystallographyComposite materialChemistrySilicon Carbide Semiconductor TechnologiesCopper Interconnects and ReliabilitySemiconductor materials and devices