Mechanically controllable nonlinear dielectrics
Deng-Li Ko, Ming-Lin Tsai, J. W. Chen, Pao-Wen Shao, Yueze Tan, J. J. Wang, Sheng‐Zhu Ho, Yu-Hong Lai, Yu‐Lun Chueh, Yu‐Chieh Chen, Din Ping Tsai, Long‐Qing Chen, Ying‐Hao Chu
Abstract
(BTO) materials were epitaxially fabricated on flexible muscovite substrate. Through simple bending, the application of mechanical force can regulate the dielectric constant of BSTO from -77 to 36% and the channel current of BTO-based ferroelectric field effect transistor by two orders. The detailed mechanism was studied through the exploration of phase transition and determination of band structure. In addition, the phase-field simulations were implemented to provide theoretical support. This research opens a new avenue for mechanically controllable components based on high-quality oxide heteroepitaxy.