Demonstration of 4H-SiC Thyristor Triggered by 100-mW/cm<sup>2</sup> UV Light
Xi Wang, Hongbin Pu, Qing Liu, Liqi An, Xinyu Tang, Zhiming Chen
Abstract
In this letter, a silicon carbide (SiC) thyristor, with an 80- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> thick p-type blocking base, is fabricated and triggered by a 365-nm ultraviolet light-emitting diode (UV LED). In the fabricated thyristor, a thin double-layer n-base structure is designed to improve the poor hole-injection capacity of p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> n emitter junction and reduce the triggering ultraviolet light intensity. The UV-LED-triggered performance of the fabricated light-triggered SiC thyristor (LTT) is tested by a resistive load circuit. The results indicate that the fabricated SiC LTT can be triggered by a UV LED with an intensity of 100 mW/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . Also, it is shown that the turn-on delay time ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${t}_{\text {d}}$ </tex-math></inline-formula> ) has the highest proportion in the turn-on time ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${t}_{\text {on}}$ </tex-math></inline-formula> ) and affects the turn-on performance of the SiC LTT most significantly.