Smart-cut-like laser slicing of GaN substrate using its own nitrogen
Atsushi Tanaka, Ryuji Sugiura, Daisuke Kawaguchi, Toshiki Yui, Yotaro Wani, Tomomi Aratani, Hirotaka Watanabe, Hadi Sena, Yoshio Honda, Yasunori Igasaki, Hiroshi Amano
Abstract
We have investigated the possibility of applying lasers to slice GaN substrates. Using a sub-nanosecond laser with a wavelength of 532 nm, we succeeded in slicing GaN substrates. In the laser slicing method used in this study, there was almost no kerf loss, and the thickness of the layer damaged by laser slicing was about 40 µm. We demonstrated that a standard high quality homoepitaxial layer can be grown on the sliced surface after removing the damaged layer by polishing.
Topics & Concepts
SlicingPolishingMaterials scienceLaserLayer (electronics)Substrate (aquarium)OptoelectronicsNanosecondWavelengthOpticsComposite materialComputer sciencePhysicsOceanographyGeologyWorld Wide WebLaser Material Processing TechniquesIntegrated Circuits and Semiconductor Failure AnalysisAdvanced Surface Polishing Techniques