Litcius/Paper detail

Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition

Bruno Galizia, Patrick Fiorenza, Emanuela Schilirò, B. Pécz, Zsolt Foragassy, Giuseppe Greco, Mario Saggio, Salvatore Cascino, Raffaella Lo Nigro, Fabrizio Roccaforte

2024Materials Science in Semiconductor Processing10 citationsDOI

Topics & Concepts

Materials scienceNitrideAluminum oxideAtomic layer depositionLayer (electronics)AluminiumOxideDeposition (geology)MetallurgyComposite materialPaleontologyBiologySedimentSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesCopper Interconnects and Reliability
Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition | Litcius