Nonvolatile ferroelectric control of topological states in two-dimensional heterostructures
Hua Bai, Xinwei Wang, Weikang Wu, Pimo He, Zhu‐An Xu, Shengyuan A. Yang, Yunhao Lu
Abstract
Quantum spin Hall (QSH) insulator materials feature topologically protected edge states that can drastically reduce dissipation and are useful for the next-generation electronics. However, the nonvolatile control of topological edge state is still a challenge. In this paper, based on first-principles calculations, the switchable topological states are found in the van der Waals (vdW) heterostructures consisting of two-dimensional (2D) Bi(111) bilayer (BL) and $\ensuremath{\alpha}\text{\ensuremath{-}}{\mathrm{In}}_{2}{\mathrm{Se}}_{3}$ by reversing the electric polarization of the ferroelectric $\ensuremath{\alpha}\text{\ensuremath{-}}{\mathrm{In}}_{2}{\mathrm{Se}}_{3}$. The topological switching results from the different charge transfer associated with the two opposite polarization states of $\ensuremath{\alpha}\text{\ensuremath{-}}{\mathrm{In}}_{2}{\mathrm{Se}}_{3}$. This new topological switching mechanism has the unique advantages of being fully electrical as well as nonvolatile. Our finding provides an unprecedented approach to realize ferroelectric control of topological states in 2D materials, which will have great potential for applications in topological nanoscale electronics.