Ga2O3 thin films by sol-gel method its optical properties
Lay Boon Cheah, Rozana Aina Maulat Osman, P. Poopalan
Abstract
Gallium (III) oxide Ga2O3 is emerging in the field of wide bandgap semiconductor for various applications such as solar-blind photodetectors et al. because of its wide bandgap. For this reason, the optical properties of Ga2O3 by sol-gel method are analyzed. Ga2O3 thin films are prepared by spin coating method. The annealing temperature to make α–Ga2O3 is in the range of 450°C-550°C, where after 550°C, β–Ga2O3 is obtained as reported in reviewed works. Therefore, annealing temperatures of samples are set at 500°C, 700°C and 900°C. X-ray diffraction is performed to characterize the structure of the sample. The optical bandgap of Ga2O3 is calculated based on the transmittance value measured from UV-Visible spectrophotometer, which range from 4.8eV to 5.0eV.