Solid-Ionic Memory in a van der Waals Heterostructure
Jieqiong Chen, Jieqiong Chen, Rui Guo, Xiaowei Wang, Chao Zhu, Guiming Cao, Lü You, Ruihuan Duan, Chao Zhu, Shreyash Hadke, Xun Cao, Teddy Salim, Pio John S. Buenconsejo, Manzhang Xu, Xiaoxu Zhao, Jiadong Zhou, Ya Deng, Qingsheng Zeng, Lydia Helena Wong, Jingsheng Chen, Jingsheng Chen, Fucai Liu, Zheng Liu
Abstract
Defect states dominate the performance of low-dimensional nanoelectronics, which deteriorate the serviceability of devices in most cases. But in recent years, some intriguing functionalities are discovered by defect engineering. In this work, we demonstrate a bifunctional memory device of a MoS2/BiFeO3/SrTiO3 van der Waals heterostructure, which can be programmed and erased by solely one kind of external stimuli (light or electrical-gate pulse) via engineering of oxygen-vacancy-based solid-ionic gating. The device shows multibit electrical memory capability (>22 bits) with a large linearly tunable dynamic range of 7.1 × 106 (137 dB). Furthermore, the device can be programmed by green- and red-light illuminations and then erased by UV light pulses. Besides, the photoresponse under red-light illumination reaches a high photoresponsivity (6.7 × 104 A/W) and photodetectivity (2.12 × 1013 Jones). These results highlighted solid-ionic memory for building up multifunctional electronic and optoelectronic devices.