Investigation of heat-dissipation structures in resonant tunneling diodes and their characteristics on terahertz oscillators
Hiroki Tanaka, Hidenari Fujikata, Feifan Han, Safumi Suzuki
Abstract
Abstract This study investigates the heat dissipation structures for resonant tunneling diodes (RTDs). The n + -InGaAs conductive layer beneath the RTD double-barrier layer, which possesses low thermal conductivity and disrupting heat dissipation, has been replaced with n + -InP, which has high thermal conductivity. We manufactured simple RTD mesa structures with varying areas to analyze the impact of heat dissipation. Additionally, we conducted a study to explore the relationship between mesa area and power consumption at the RTD mesa under current–voltage measurements. The results clearly indicate that the proposed structure, incorporating an n + -InP layer, can function over an area twice as large without experiencing heat-induced destruction. By integrating this proposed structure, we successfully fabricated terahertz oscillators equipped with rectangular-cavity resonators. These oscillators achieved relatively high output power, approximately 0.2 mW was achieved at a frequency of 0.53 THz, all without any heat-induced damage, even within a large-area RTD device.