Metal oxide-based resistive switching memristors for neuromorphic computing
Qiaoling Tian, Xuanyu Shan, Jingyao Bian, Yankun Cheng, Jiahui Zheng, Zhongqiang Wang, Xiaoning Zhao, Haiyang Xu, Yichun Liu
Abstract
Metal oxide-based resistive switching memristors are emerging as promising nanodevices for the hardware implementation of neuromorphic computing. We focus on the development of a neuromorphic computing system based on metal oxide memristors.
Topics & Concepts
Neuromorphic engineeringMemristorMaterials scienceOxideResistive random-access memoryNanotechnologyMetalResistive touchscreenOptoelectronicsElectronic engineeringElectrical engineeringComputer scienceArtificial intelligenceArtificial neural networkMetallurgyVoltageEngineeringAdvanced Memory and Neural ComputingCCD and CMOS Imaging SensorsPhase-change materials and chalcogenides