Tunnel-Coupled Laser Diode Microarray as a kW-Level 100-ns Pulsed Optical Power Source (λ = 910 nm)
S. O. Slipchenko, A. A. Podoskin, D.A. Veselov, V.A. Strelets, N. A. Rudova, N. A. Pikhtin, Т. А. Багаев, М. А. Ладугин, А. А. Маrmalyuk, P. S. Kop’ev
Abstract
Pulsed 910nm laser sources based on tunnel-coupled AlGaAs/InGaAs/GaAs heterostructures have been developed and studied. To provide the maximum brightness and operation in the linear part of the light-current characteristic, a microarray design was developed. This design includes <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$3\times 800$ </tex-math></inline-formula> - <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> -wide stripes in the emitting region. It was demonstrated that, under pumping with 760 A/100 ns current pulses, laser pulse with peak power of 1150 W can be generated. Raising the working temperature led to an insignificant deterioration of emission characteristics, which was manifested by the peak powers of 1030 W/750 A/50°C and 905 W/720 A/75°C.