High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers
Giuseppe Di Gioia, Éric Frayssinet, Mohammed Samnouni, Vinay Chinni, Priyanka Mondal, J. Treuttel, X. Wallart, Malek Zegaoui, G. Ducournau, Yannick Roelens, Y. Cordier, M. Zaknoune
Topics & Concepts
Schottky diodeMaterials scienceBreakdown voltageOptoelectronicsEquivalent series resistanceDiodeDopingSchottky barrierGallium nitrideMetal–semiconductor junctionSilicon carbideWide-bandgap semiconductorLayer (electronics)VoltageElectrical engineeringNanotechnologyComposite materialEngineeringGaN-based semiconductor devices and materialsSuperconducting and THz Device TechnologyRadio Frequency Integrated Circuit Design