Nanometer-Scale Lateral p–n Junctions in Graphene/α-RuCl<sub>3</sub> Heterostructures
Daniel J. Rizzo, Sara Shabani, Bjarke S. Jessen, Jin Zhang, Alexander McLeod, Carmen Rubio-Verdú, Francesco L. Ruta, Matthew Cothrine, Jiaqiang Yan, David Mandrus, S. E. Nagler, Ángel Rubio, James Hone, Cory R. Dean, Abhay N. Pasupathy, D. N. Basov
Abstract
The ability to create nanometer-scale lateral p–n junctions is essential for the next generation of two-dimensional (2D) devices. Using the charge-transfer heterostructure graphene/α-RuCl3, we realize nanoscale lateral p–n junctions in the vicinity of graphene nanobubbles. Our multipronged experimental approach incorporates scanning tunneling microscopy (STM) and spectroscopy (STS) and scattering-type scanning near-field optical microscopy (s-SNOM) to simultaneously probe the electronic and optical responses of nanobubble p–n junctions. Our STM/STS results reveal that p–n junctions with a band offset of ∼0.6 eV can be achieved with widths of ∼3 nm, giving rise to electric fields of order 108 V/m. Concurrent s-SNOM measurements validate a point-scatterer formalism for modeling the interaction of surface plasmon polaritons (SPPs) with nanobubbles. Ab initio density functional theory (DFT) calculations corroborate our experimental data and reveal the dependence of charge transfer on layer separation. Our study provides experimental and conceptual foundations for generating p–n nanojunctions in 2D materials.