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Investigation of performance enhancement of a recessed gate field-plated AlGaN/AlN/GaN nano-HEMT on β-Ga2O3 substrate with variation of AlN spacer layer thickness

G. Purnachandra Rao, Trupti Ranjan Lenka, Nour El I. Boukortt, Sharif Md. Sadaf, Hieu Pham Trung Nguyen

2023Journal of Materials Science Materials in Electronics18 citationsDOI

Topics & Concepts

Materials scienceHigh-electron-mobility transistorOptoelectronicsLayer (electronics)Substrate (aquarium)Barrier layerElectron mobilityTransistorNanotechnologyElectrical engineeringVoltageOceanographyEngineeringGeologyGa2O3 and related materialsGaN-based semiconductor devices and materialsZnO doping and properties
Investigation of performance enhancement of a recessed gate field-plated AlGaN/AlN/GaN nano-HEMT on β-Ga2O3 substrate with variation of AlN spacer layer thickness | Litcius