Channel Length Scaling Pattern for Cylindrical Surrounding Double-Gate (CSDG) MOSFET
Uchechukwu A. Maduagwu, Viranjay M. Srivastava
Abstract
The natural length of MOSFETs helps to describe the potential distribution in the Silicon substrate. This natural length varies in different device structures, from a single gate to multi-gate device geometry. To measure the short channel effects degree, the natural length should be known because various vital parameters such as OFF-current, Roll-off threshold voltage, and drain induced barrier lowering depend on it. In this research work, authors have presented a scaling theory for Cylindrical Surrounding Double-Gate (CSDG) MOSFET, which guide the device design. The scaling method has been derived, based on the application of the Poisson equation, in a cylindrical structure using Parabolic Potential Approximation (PPA) along the radial direction (substrate part only). Furthermore, a comparison with cylindrical surrounding-gate MOSFETs, Silicon-on-insulator, and double-gate device geometries has been obtained. The results obtained using the PPA model show that CSDG MOSFET has the least natural length, making it a better component for SCEs immunity.