Simulation of capacitorless dynamic random access memory based on junctionless FinFETs using grain boundary of polycrystalline silicon
Min Su Cho, Hye Jin Mun, Sang Ho Lee, Jaewon Jang, Jin‐Hyuk Bae, In Man Kang
Topics & Concepts
Polycrystalline siliconGrain boundaryMaterials scienceCrystalliteSiliconSilicon on insulatorDynamic random-access memoryCondensed matter physicsOptoelectronicsNanotechnologyPhysicsElectrical engineeringEngineeringMicrostructureMetallurgySemiconductor memoryThin-film transistorLayer (electronics)Semiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignIntegrated Circuits and Semiconductor Failure Analysis