Litcius/Paper detail

A single-ended low leakage and low voltage 10T SRAM cell with high yield

Nima Eslami, Behzad Ebrahimi, Erfan Shakouri, Deniz Najafi

2020Analog Integrated Circuits and Signal Processing45 citationsDOI

Topics & Concepts

Static random-access memoryTransistorVoltageLeakage (economics)Low voltageNode (physics)Threshold voltageDissipationElectrical engineeringElectronic engineeringComputer scienceMaterials scienceEngineeringPhysicsStructural engineeringMacroeconomicsThermodynamicsEconomicsLow-power high-performance VLSI designVLSI and FPGA Design TechniquesVLSI and Analog Circuit Testing
A single-ended low leakage and low voltage 10T SRAM cell with high yield | Litcius