Area-Selective Chemical Doping on Solution-Processed MoS<sub>2</sub> Thin-Film for Multi-Valued Logic Gates
Jihyun Kim, Myeongjin Jung, Dong Un Lim, Dongjoon Rhee, Sung Hyeon Jung, Hyung Koun Cho, Han‐Ki Kim, Jeong Ho Cho, Joohoon Kang
Abstract
Multi-valued logic gates are demonstrated on solution-processed molybdenum disulfide (MoS2) thin films. A simple chemical doping process is added to the conventional transistor fabrication procedure to locally increase the work function of MoS2 by decreasing sulfur vacancies. The resulting device exhibits pseudo-heterojunctions comprising as-processed MoS2 and chemically treated MoS2 (c-MoS2). The energy-band misalignment of MoS2 and c-MoS2 results in a sequential activation of the MoS2 and c-MoS2 channel areas under a gate voltage sweep, which generates a stable intermediate state for ternary operation. Current levels and turn-on voltages for each state can be tuned by modulating the device geometries, including the channel thickness and length. The optimized ternary transistors are incorporated to demonstrate various ternary logic gates, including the inverter, NMIN, and NMAX gates.