Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics (Adv. Mater. 43/2023)
Ju Yong Park, Duk‐Hyun Choe, Dong Hyun Lee, Geun Taek Yu, Kun Yang, Se Hyun Kim, Geun Hyeong Park, Seung‐Geol Nam, Hyun Jae Lee, Sanghyun Jo, Bong Jin Kuh, Daewon Ha, Yongsung Kim, Jinseong Heo, Min Hyuk Park
Abstract
Ferroelectric Field-Effect Transistors Because of their simple structure and operation scheme based on characteristic spontaneous polarization, ferroelectric field-effect-transistors (FeFETs), which are reviewed by Jinseong Heo, Min Hyuk Park, and co-workers in article number 2204904, are considered promising for ultrahigh-density information storage with high speed and power efficiency. A post-3D-NAND structure based on the FeFET is shown.
Topics & Concepts
Materials scienceFerroelectricityField-effect transistorPolarization (electrochemistry)TransistorFerroelectric RAMOptoelectronicsFluoriteNAND gateFerroelectric capacitorNanotechnologyEngineering physicsElectronic engineeringElectrical engineeringLogic gateDielectricVoltageMetallurgyEngineeringChemistryPhysical chemistryFerroelectric and Piezoelectric MaterialsEngineering Applied ResearchMaterial Properties and Applications